SI1031R/x vishay siliconix new product document number: 71171 s-02970?rev. a, 22-jan-01 www.vishay.com 1 p-channel 20-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (ma) 8 @ v gs = ?4.5 v ?150 12 @ v gs = ?2.5 v ?125 ?20 15 @ v gs = ?1.8 v ?100 20 @ v gs = ?1.5 v ?30
high-side switching low on-resistance: 8 low threshold: 0.9 v (typ) fast swtiching speed: 45 ns 1.8-v operation gate-source esd protection ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers sc-75a (sot? 416): SI1031R sc-89 (sot? 490): si1031x top view 2 1 s d g 3 marking code: h sc-75a or sc-89
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# SI1031R si1031x parameter symbol 5 secs steady state 5 secs steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 6 v a t a = 25 c ?150 ?140 ?165 ?155 continuous drain current (t j = 150 c) a t a = 85 c i d ?110 ?100 ?150 ?125 pulsed drain current a i dm ?500 ?600 ma continuous source current (diode conduction) a i s ?250 ?200 ?340 ?240 t a = 25 c 280 250 340 300 maximum power dissipation a t a = 85 c p d 145 130 170 150 mw operating junction and storage temperature range t j , t stg ?55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v notes a. surface mounted on fr4 board.
SI1031R/x vishay siliconix new product www.vishay.com 2 document number: 71171 s-02970 ? rev. a, 22-jan-01
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# parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.40 ? 1.20 v v ds = 0 v, v gs = 2.8 v 0.5 1 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 1 2 a v ds = ? 16 v, v gs = 0 v ? 1 ? 500 na zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 85 c ? 10 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 4.5 v ? 200 ma v gs = ? 4.5 v, i d = ? 150 ma 8 v gs = ? 2.5 v, i d = ? 125 m a 12 drain-source on-state resistance a r ds(on) v gs = ? 1.8 v, i d = ? 100 m a 15 v gs = ? 1.5 v, i d = ? 30 m a 20 forward transconductance a g fs v ds = ? 10 v, i d = ? 150 ma 0.4 s diode forward voltage a v sd i s = ? 150 ma, v gs = 0 v ? 1.2 v dynamic b total gate charge q g 1500 gate-source charge q gs v ds = ? 10 v, v gs = ? 4.5 v, i d = ? 150 ma 150 pc gate-drain charge q gd 450 turn-on delay time t d(on) 55 rise time t r v dd = ? 10 v, r l = 65 30 turn-off delay time t d(off) v dd = ? 10 v, r l = 65 i d ? 150 ma, v gen = ? 4.5 v, r g = 10 60 ns fall time t f 30 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. !
# 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v gs = 5 thru 2.5 v t j = ? 55 c 125 c 2 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (ma) i d 1.8 v
SI1031R/x vishay siliconix new product document number: 71171 s-02970 ? rev. a, 22-jan-01 www.vishay.com 3 !
# 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ? on-resistance ( r ds(on) ) 0 20 40 60 80 100 120 048121620 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 0 200 400 600 800 1000 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 150 ma i d ? drain current (ma) v gs = 4.5 v i d = 150 ma v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0 10 20 30 40 50 0123456 i d = 150 ma 1000 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) v gs = 4.5 v i d = 125 ma v gs = 2.5 v v gs = 1.8 v i d = 125 ma t j = 125 c t j = 25 c t j = ? 55 c 10 100 i s ? source current (ma) v gs = 0 v f = 1 mhz
SI1031R/x vishay siliconix new product www.vishay.com 4 document number: 71171 s-02970 ? rev. a, 22-jan-01 !
# ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. t emperature variance (v) v gs(th) t j ? temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 i gss vs. t emperature t j ? temperature ( c) i gss ? ( a) ? 7 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 ? 50 ? 25 0 25 50 75 100 125 bv gss vs. t emperature t j ? temperature ( c) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a, SI1031R only) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja =500 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm v gs = 2.8 v bv gss ? gate-to-source breakdown voltage (v)
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